FDB28N30TM

FAIRCHILD SEMICONDUCTOR  FDB28N30TM  晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V

The is a N-channel enhancement-mode Power FET produced using "s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.

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Improved dV/dt capability

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100% Avalanche tested

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Fast switching

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39nC Typical low gate charge

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35pF Typical low Crss