P沟道增强方式MOSFET
MOSFET - 阵列 2 个 P 沟道(双) 15V 1.17A 840mW 表面贴装型 8-SOIC
得捷:
MOSFET 2P-CH 15V 1.17A 8-SOIC
立创商城:
2个P沟道 15V 1.17A
德州仪器TI:
Dual P-channel Enhancemenent-Mode MOSFET
艾睿:
Thanks to Texas Instruments, both your amplification and switching needs can be taken care of with one component: the TPS1120DR power MOSFET. Its maximum power dissipation is 840 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
安富利:
Trans MOSFET P-CH 15V 1.17A 8-Pin SOIC T/R
Chip1Stop:
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
Verical:
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R
力源芯城:
双路P沟道增强方式MOSFET
Win Source:
MOSFET 2P-CH 15V 1.17A 8-SOIC
型号 | 品牌 | 下载 |
---|---|---|
TPS1120DR | TI 德州仪器 | 下载 |
TPS1120D | TI 德州仪器 | 下载 |
TPS1100DR | TI 德州仪器 | 下载 |
TPS1100PWR | TI 德州仪器 | 下载 |
TPS1100D | TI 德州仪器 | 下载 |
TPS1100DG4 | TI 德州仪器 | 下载 |
TPS1100PW | TI 德州仪器 | 下载 |
TPS1101PWR | TI 德州仪器 | 下载 |
TPS1120DG4 | TI 德州仪器 | 下载 |
TPS1101D | TI 德州仪器 | 下载 |
TPS1H100BQPWPRQ1 | TI 德州仪器 | 下载 |