TGF2977-SM

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB

The is a 6 W P3dB discrete GaN on SiC HEMT which operates from DC to 12 GHz. The device is constructed with the proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Download this white paper developed by designers at Plextek RFI in the UK demonstrating the excellent performance of a single stage power amplifier based on the TGF2977-SM operating in X-band at 9.3 to 9.5GHz.