HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
Description
These N-Channel MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
• Ultra Low On-Resistance
• N-Channel MOSFET
• SOT-23 Footprint
• Low Profile <1.1mm
• Available in Tape and Reel
• Fast Switching
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