PHT4NQ10T,135

NXP  PHT4NQ10T,135  晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V

The is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in primary side switch in DC to DC converters, high speed line driver and fast general purpose switch applications.

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Very fast switching

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Surface-mount package

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-65 to 150°C Junction temperature range