FDN357N

FAIRCHILD SEMICONDUCTOR  FDN357N  晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V

The is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using "s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.

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High density cell design for extremely low RDS ON

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Exceptional ON-resistance and maximum DC current capability