DXT2222A-13

DXT2222A-13概述

DXT2222A-13 编带

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available DXT2907A

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant Note 1

• "Green" Device Note 2


得捷:
TRANS NPN 40V 0.6A SOT89-3


立创商城:
NPN 40V 600mA


艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DXT2222A-13 GP BJT from Diodes Zetex. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.


安富利:
Trans GP BJT NPN 40V 0.6A 4-Pin3+Tab SOT-89 T/R


富昌:
DXT2222A 系列 40 V 600 mA 1 W NPN 表面贴装 晶体管 - SOT-89-3


Chip1Stop:
Trans GP BJT NPN 40V 0.6A 4-Pin3+Tab SOT-89 T/R


Verical:
Trans GP BJT NPN 40V 0.6A Automotive 4-Pin3+Tab SOT-89 T/R


Win Source:
TRANS NPN 40V 0.6A SOT89-3


DeviceMart:
TRANSISTOR BIPO NPN 40V SOT89-3


DXT2222A-13数据文档
型号 品牌 下载
DXT2222A-13

Diodes 美台

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DXT2010P5-13

Diodes 美台

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DXT2014P5-13

Diodes 美台

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DXT2012P5-13

Diodes 美台

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DXT2907A-13

Diodes 美台

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DXT2013P5-13

Diodes 美台

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DXT2011P5-13

Diodes 美台

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