BSZ065N03LSATMA1

INFINEON  BSZ065N03LSATMA1  晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSZ065N03LSATMA1, 40 A, Vds=30 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 30V 12A/40A TSDSON

立创商城:
N沟道 30V 12A 40A

贸泽:
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSZ065N03LSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 26W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 30V 12A/40A TSDSON / N-Channel 30 V 12A Ta, 40A Tc 2.1W Ta, 26W Tc Surface Mount PG-TSDSON-8-FL