IXDD630MYI

IXDD630MYI概述

低边 IGBT MOSFET 灌:30A 拉:30A

Ideal for a make and break circuit this power driver manufactured by Ixys Corporation will allow you to implement a transistor rather than a relay! This device has a maximum propagation delay time of 65 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 7 V and a maximum of 35 V.

IXDD630MYI数据文档
型号 品牌 下载
IXDD630MYI

IXYS Semiconductor

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IXDD509D1T/R

IXYS Semiconductor

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IXDD504SIAT/R

IXYS Semiconductor

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IXDD504D2T/R

IXYS Semiconductor

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IXDD609D2TR

IXYS Semiconductor

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IXDD609PI

IXYS Semiconductor

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IXDD630YI

IXYS Semiconductor

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IXDD609SIA

IXYS Semiconductor

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IXDD604SIA

IXYS Semiconductor

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IXDD609CI

IXYS Semiconductor

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IXDD604PI

IXYS Semiconductor

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