RF Bipolar Transistors HiRel NPN Silicon RF Transistor
Summary of Features:
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HiRel Discrete and Microwave Semiconductor
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For Medium Power Amplifiers
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Compression Point P-1dB =19dBm 1.8 GHz
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Max. Available Gain Gma = 16dB at 1.8 GHz
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Hermetically sealed microwave package
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Transition Frequency fT = 20 GHz
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SIEGET® 25-Line
Technologies Grounded Emitter Transistor-25 GHz fT-Line
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Type Variant No. 03
Target Applications:
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Quality level for Engineering Models