SI7386DP-T1-E3数据手册PDF_SI7386DP-T1-E3中文资料-锐单商城

SI7386DP-T1-E3概述

VISHAY SI7386DP-T1-E3. 晶体管, N沟道

The is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.

.: Reduced total dynamic gate charge Qg

.: Fast switching

.: PWM optimized for high efficiency

.: New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

.: 100% Rg tested

.: -55 to 150°C Operating temperature range

SI7386DP-T1-E3详细参数

SI7386DP-T1-E3数据文档

型号	品牌	下载
SI7386DP-T1-E3	Vishay Semiconductor 威世	下载
SI7309DN-T1-GE3	Vishay Semiconductor 威世	下载
SI7317DN-T1-GE3	Vishay Semiconductor 威世	下载
SI7308DN-T1-GE3	Vishay Semiconductor 威世	下载
SI7322DN-T1-GE3	Vishay Semiconductor 威世	下载
SI7386DP-T1-GE3	Vishay Semiconductor 威世	下载
SI7336ADP-T1-GE3	Vishay Semiconductor 威世	下载
SI7336ADP-T1-E3	Vishay Semiconductor 威世	下载
SI7370DP-T1-E3	Vishay Semiconductor 威世	下载
SI7308DN-T1-E3	Vishay Semiconductor 威世	下载
SI7309DN-T1-E3	Vishay Semiconductor 威世	下载