IXFN 系列 单通道 N 沟道 100 Vds 2.6 mOhm 830 W 功率 MOSFET - SOT-227B
N-Channel 100V 360A Tc 830W Tc Chassis Mount SOT-227B
得捷:
MOSFET N-CH 100V 360A SOT-227B
欧时:
MOSFET 360A 100V SOT227
艾睿:
Use Ixys Corporation&s;s IXFN360N10T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 830000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Chip1Stop:
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
Verical:
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXFN360N10T | IXYS Semiconductor | 下载 |
| IXFN100N10S2 | IXYS Semiconductor | 下载 |
| IXFN100N10S3 | IXYS Semiconductor | 下载 |
| IXFN48N55 | IXYS Semiconductor | 下载 |
| IXFN150N15 | IXYS Semiconductor | 下载 |
| IXFN48N50U3 | IXYS Semiconductor | 下载 |
| IXFN48N50U2 | IXYS Semiconductor | 下载 |
| IXFN150N10 | IXYS Semiconductor | 下载 |
| IXFN44N50U3 | IXYS Semiconductor | 下载 |
| IXFN44N50U2 | IXYS Semiconductor | 下载 |
| IXFN200N07 | IXYS Semiconductor | 下载 |