SI7430DP-T1-GE3

SI7430DP-T1-GE3概述

VISHAY  SI7430DP-T1-GE3  晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V

The is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and single-ended power switch applications.

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Extremely low Qgd for reduced dV/dt, Qgd and shoot-through
.
100% Rg tested
.
100% UIS tested
.
Halogen-free
.
-55 to 150°C Operating temperature range
SI7430DP-T1-GE3数据文档
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