BSL306NH6327XTSA1

P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

OptiMOS™2 功率 MOSFET 系列

Infineon

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET 2N-CH 30V 2.3A 6TSOP

欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSL306NH6327XTSA1, 2.3 A, Vds=30 V, 6引脚 TSOP封装

e络盟:
双路场效应管, MOSFET, N沟道, 30 V, 2.3 A, 0.043 ohm, TSOP, 表面安装

艾睿:
Create an effective common drain amplifier using this BSL306NH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 30V 2.3A 6-Pin TSOP T/R

富昌:
30V 2.3A 57mΩ N-ch TSOP-6 dual

Chip1Stop:
Trans MOSFET N-CH 30V 2.3A Automotive 6-Pin TSOP T/R

TME:
Transistor: N-MOSFET x2; unipolar; 30V; 2.3A; 500mW; TSOP6

Verical:
Trans MOSFET N-CH 30V 2.3A Automotive 6-Pin TSOP T/R

Win Source:
MOSFET 2N-CH 30V 2.3A 6TSOP