SPD50N03S207GBTMA1

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SPD50N03S207GBTMA1概述

DPAK N-CH 30V 50A

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

.
Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
SPD50N03S207GBTMA1中文资料参数规格
技术参数

额定功率 136 W

极性 N-CH

耗散功率 136 W

漏源极电压Vds 30 V

连续漏极电流Ids 50A

上升时间 36 ns

输入电容Ciss 2170pF @25VVds

下降时间 25 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 136W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

制造应用 VRD/VRM, Mainboard, Onboard charger

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买SPD50N03S207GBTMA1
型号: SPD50N03S207GBTMA1
描述:DPAK N-CH 30V 50A
替代型号SPD50N03S207GBTMA1
型号/品牌 代替类型 替代型号对比

SPD50N03S207GBTMA1

Infineon 英飞凌

当前型号

当前型号

IPD50N03S207ATMA1

英飞凌

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SPD50N03S207GBTMA1和IPD50N03S207ATMA1的区别

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