DPAK N-CH 30V 50A
Description:
With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.
Available in halfbridge configuration power stage 5x6
Summary of Features:
Benefits:
额定功率 136 W
极性 N-CH
耗散功率 136 W
漏源极电压Vds 30 V
连续漏极电流Ids 50A
上升时间 36 ns
输入电容Ciss 2170pF @25VVds
下降时间 25 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 136W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 VRD/VRM, Mainboard, Onboard charger
RoHS标准
含铅标准 无铅
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SPD50N03S207GBTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD50N03S207ATMA1 英飞凌 | 类似代替 | SPD50N03S207GBTMA1和IPD50N03S207ATMA1的区别 |