STMICROELECTRONICS STD6N62K3 功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics
立创商城:
N沟道 620V 5.5A
得捷:
MOSFET N-CH 620V 5.5A DPAK
欧时:
STMicroelectronics MDmesh K3, SuperMESH3 系列 N沟道 MOSFET 晶体管 STD6N62K3, 5.5 A, Vds=620 V, 3引脚
e络盟:
晶体管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
艾睿:
This STD6N62K3 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 90000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes supermesh 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 620V 5.5A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 620V 5.5A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 620V 5.5A 3-Pin2+Tab DPAK T/R
Newark:
# STMICROELECTRONICS STD6N62K3 MOSFET Transistor, N Channel, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
力源芯城:
620V,0.95Ω,5.5A,N沟道功率MOSFET
DeviceMart:
MOSFET N-CH 620V 5.5A DPAK
Win Source:
MOSFET N-CH 620V 5.5A DPAK
针脚数 3
漏源极电阻 0.95 Ω
极性 N-Channel
耗散功率 90 W
阈值电压 3.75 V
输入电容 875 pF
漏源极电压Vds 620 V
连续漏极电流Ids 5.5A
上升时间 12 ns
输入电容Ciss 706pF @50VVds
额定功率Max 90 W
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.2 mm
高度 2.4 mm
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD6N62K3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
FCD5N60TM 飞兆/仙童 | 功能相似 | STD6N62K3和FCD5N60TM的区别 |
FQB6N70TM 飞兆/仙童 | 功能相似 | STD6N62K3和FQB6N70TM的区别 |
STB6N52K3 意法半导体 | 功能相似 | STD6N62K3和STB6N52K3的区别 |