N沟道60 V , 0.0057 Ω , 19的PowerFLAT ? 5×6的STripFET ?功率MOSFET N-channel 60 V, 0.0057 Ω, 19 A PowerFLAT? 5x6 STripFET? Power MOSFET
表面贴装型 N 通道 60 V 85A(Tc) 80W(Tc) PowerFlat™(5x6)
得捷:
MOSFET N-CH 60V 85A POWERFLAT
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STL85N6F3 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 80000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
富昌:
N-Channel 60 V 0.0065 Ohm 19 A Power MosFet - PowerFLAT 5x6
DeviceMart:
MOSFET N-CH 60V 85A POWERFLAT5X6
Win Source:
MOSFET N-CH 60V 85A POWERFLAT5X6
极性 N-CH
耗散功率 80W Tc
漏源极电压Vds 60 V
连续漏极电流Ids 19A
上升时间 14.3 ns
输入电容Ciss 3400pF @25VVds
额定功率Max 4 W
下降时间 7.1 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80W Tc
安装方式 Surface Mount
引脚数 8
封装 PowerVDFN-8
封装 PowerVDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STL85N6F3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IPB054N06N3GATMA1 英飞凌 | 功能相似 | STL85N6F3和IPB054N06N3GATMA1的区别 |
SPB80N06S2-H5 英飞凌 | 功能相似 | STL85N6F3和SPB80N06S2-H5的区别 |
SPB80N06S2L-05 英飞凌 | 功能相似 | STL85N6F3和SPB80N06S2L-05的区别 |