ON SEMICONDUCTOR 2SC6144SG Bipolar BJT Single Transistor, NPN, 50 V, 330 MHz, 25 W, 10 A, 200 hFE 新
- 双极 BJT - 单 NPN 330MHz 通孔 TO-220F-3FS
得捷:
TRANS NPN 50V 10A TO220F-3FS
欧时:
BIP NPN 10A 50V
立创商城:
2SC6144SG
贸泽:
双极晶体管 - 双极结型晶体管BJT BIP NPN 10A 50V
艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC6144SG GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 25000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
安富利:
Trans GP BJT NPN 50V 10A 3-Pin3+Tab TO-220F-3SG Magazine
Chip1Stop:
Trans GP BJT NPN 50V 10A 3-Pin3+Tab TO-220F-3SG Magazine
Verical:
Trans GP BJT NPN 50V 10A 25000mW 3-Pin3+Tab TO-220F-3FS Tube
Newark:
# ON SEMICONDUCTOR 2SC6144SG TRANSISTOR, BIPOL, NPN, 50V, SC-67-3
频率 330 MHz
针脚数 3
极性 NPN
耗散功率 25 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 10A
最小电流放大倍数hFE 200
最大电流放大倍数hFE 560
额定功率Max 25 W
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220F-3
封装 TO-220F-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tube
最小包装 50
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99