IRF510A

先进的功率MOSFET Advanced Power MOSFET

FEATURES

• Avalanche Rugged Technology

• Rugged Gate Oxide Technology

• Lower Input Capacitance

• Improved Gate Charge

• Extended Safe Operating Area

• 175°C Operating Temperature

• Lower Leakage Current : 10 μA Max. @ VDS= 100V

• Lower RDSON : 0.289 ΩTyp.

贸泽:
MOSFET 100V .2 OHM 33W

艾睿:
Trans MOSFET N-CH 100V 5.6A 3-Pin3+Tab TO-220AB Rail

Win Source:
Advanced Power MOSFET