Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin3+Tab TO-247
IGBT PT 600 V 75 A 250 W 通孔 TO-247AD
得捷:
IGBT 600V 75A 250W TO247
艾睿:
This IXGH36N60B3C1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
TME:
Transistor: IGBT; 600V; 36A; 250W; TO247-3
Verical:
Trans IGBT Chip N-CH 600V 75A 250000mW 3-Pin3+Tab TO-247
Win Source:
IGBT 600V 75A 250W TO247
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXGH36N60B3C1 IXYS Semiconductor | 当前型号 | 当前型号 |
IGW60T120 英飞凌 | 功能相似 | IXGH36N60B3C1和IGW60T120的区别 |
IRG4PC50UDPBF 英飞凌 | 功能相似 | IXGH36N60B3C1和IRG4PC50UDPBF的区别 |
IRG4PC50WPBF 英飞凌 | 功能相似 | IXGH36N60B3C1和IRG4PC50WPBF的区别 |