VISHAY SIR812DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for motor control, load switch and O-ring applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIR812DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR836DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR802DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR862DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR872ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR876ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR800DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR870ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR880ADP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR878DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
| SIR882DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |