Trans RF MOSFET N-CH 25V 5A 3Pin PowerSO-10RF Formed lead Tube
By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 59000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD84006-E | ST Microelectronics 意法半导体 | 下载 |
| PD84006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84001 | ST Microelectronics 意法半导体 | 下载 |
| PD84002 | ST Microelectronics 意法半导体 | 下载 |
| PD84008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010S-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008S-E | ST Microelectronics 意法半导体 | 下载 |