STD12N65M5

STMICROELECTRONICS  STD12N65M5  功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

得捷:
MOSFET N-CH 650V 8.5A DPAK

欧时:
STMicroelectronics MDmesh M5 系列 N沟道 MOSFET 晶体管 STD12N65M5, 8.5 A, Vds=650 V, 3引脚 TO-252封装

贸泽:
MOSFET POWER MOSFET N-CH 650V

e络盟:
晶体管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V

艾睿:
If you need to either amplify or switch between signals in your design, then STMicroelectronics&s; STD12N65M5 power MOSFET is for you. Its maximum power dissipation is 70000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh v technology.

安富利:
Trans MOSFET N-CH 650V 8.5A 3-Pin2+Tab DPAK T/R

Newark:
# STMICROELECTRONICS  STD12N65M5  Power MOSFET, N Channel, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V

DeviceMart:
MOSFET N-CH 650V 8.5A DPAK

Win Source:
MOSFET N-CH 650V 8.5A DPAK