BSZ100N06LS3GATMA1

INFINEON  BSZ100N06LS3GATMA1  晶体管, MOSFET, N沟道, 20 A, 60 V, 0.008 ohm, 10 V, 1.7 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ100N06LS3GATMA1, 20 A, Vds=60 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 60V 11A/20A 8TSDSON

贸泽:
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 20 A, 0.008 ohm, PG-TSDSON, 表面安装

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the BSZ100N06LS3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ100N06LS3GATMA1  MOSFET Transistor, N Channel, 20 A, 60 V, 0.008 ohm, 10 V, 1.7 V