BSC098N10NS5ATMA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Summary of Features:

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Optimized for synchronous rectification

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Ideal for high switching frequency

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Output capacitance reduction of up to 44% 

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R DSon reduction of up to 43% from previous generation

Benefits:

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Highest system efficiency

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Reduced switching and conduction losses

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Less paralleling required

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Increased power density

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Low voltage overshoot

Target Applications:

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Telecom

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Server

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Solar

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Low voltage drives

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Light electric vehicles

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Adapter