TO-268 N-CH 1000V 20A
表面贴装型 N 通道 1000 V 20A（Tc） 660W（Tc） TO-268AA
得捷:
MOSFET N-CH 1000V 20A TO268
艾睿:
As an alternative to traditional transistors, the IXFT20N100P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 660000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.
Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin2+Tab D3PAK
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXFT20N100P | IXYS Semiconductor | 下载 |
| IXFT66N20Q | IXYS Semiconductor | 下载 |
| IXFT30N40Q | IXYS Semiconductor | 下载 |
| IXFT13N100 | IXYS Semiconductor | 下载 |
| IXFT80N10 | IXYS Semiconductor | 下载 |
| IXFT12N100Q | IXYS Semiconductor | 下载 |
| IXFT15N100 | IXYS Semiconductor | 下载 |
| IXFT15N100Q | IXYS Semiconductor | 下载 |
| IXFT36N50P | IXYS Semiconductor | 下载 |
| IXFT36N60P | IXYS Semiconductor | 下载 |
| IXFT24N90P | IXYS Semiconductor | 下载 |