FDC655AN

单N沟道逻辑电平MOSFET PowerTrenchTM Single N-Channel, Logic Level, PowerTrenchTM MOSFET

最大源漏极电压Vds Drain-Source Voltage| 50V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 6.3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.035Ω/Ohm @6.3A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.2V 耗散功率Pd Power Dissipation| 1.6W Description & Applications| Single N-Channel, Logic Level, PowerTrench TM MOSFET General Description This N-Channel Logic LevelMOSFET is produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications whe 6.3 A, 30 V. RDSON = 0.027 W @ VGS= 10 V RDSON = 0.035 W @ VGS= 4.5 V. Fast switching. Low gate charge typical 9 nC. SuperSOT TM-6 package: small footprint 72% smaller than SO-8; low p 描述与应用| 单N沟道逻辑电平，TM的PowerTrench MOSFET 概述 这N沟道逻辑电平MOSFET的生产采用 飞兆半导体先进的PowerTrench进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的磨片 •开关速度快 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力