BSC016N03LSGATMA1

TDSON N-CH 30V 100A

表面贴装型 N 通道 32A（Ta），100A（Tc） 2.5W（Ta），125W（Tc） PG-TDSON-8-1

得捷:
MOSFET N-CH 30V 32A/100A TDSON

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSC016N03LSGATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 125000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 30V 100A TDSON8