45 A， 600 V超快IGBT具有低压降二极管 45 A, 600 V ultra fast IGBT with low drop diode
This fast-switching IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 310000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
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