RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Easily amplify or switch electronic signals and electrical power in a circuit with this semiconductor-based RF amplifier from STMicroelectronics. Its maximum power dissipation is 31700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57018TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |