MJB44H11G

ON SEMICONDUCTOR  MJB44H11G.  功率晶体管, NPN, 80V, D2-PAK

The is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

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Low collector to emitter saturation voltage VCE sat = 1V maximum at 8A

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Fast switching speeds

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Complementary pairs simplifies designs

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ESD rating - 3B > 8000V human body model, C > 400V machine model

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5V Emitter to base voltage VEBO

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2.5°C/W Thermal resistance, junction to case

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7.5°C/W Thermal resistance, junction to ambient