STMICROELECTRONICS STD10PF06T4 晶体管, MOSFET, P沟道, -10 A, -60 V, 0.18 ohm, -10 V, -4 V
The is a STripFET™ II P-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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