IGBT 晶体管 Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
This IGBT transistor from STMicroelectronics will work perfectly in your circuit. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
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