BSZ050N03MSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ050N03MSGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 15A/40A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ050N03MSGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

艾睿:
Compared to traditional transistors, BSZ050N03MSGATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
MOSFET N-CH 30V 40A TSDSON-8

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R

Win Source:
MOSFET N-CH 30V 40A TSDSON-8