AFT18S290-13SR3

RF Power Transistor,1805 to 1995MHz, 263W, Typ Gain in dB is 18.2 @ 1960MHz, 28V, LDMOS, SOT1801

Overview

The 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

## Features RF Performance Tables

### 1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1930 MHz| 18.0| 31.2| 7.1| –36.0| –19

1960 MHz| 18.2| 31.2| 7.1| –35.0| –19

1995 MHz| 18.2| 31.8| 6.9| –35.0| –12

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.0| 33.3| 7.1| –35.0| –13

1840 MHz| 18.2| 32.7| 7.1| –35.0| –16

1880 MHz| 18.3| 32.6| 7.1| –34.0| –13