RF Power Transistor,1805 to 1880MHz, 200W, Typ Gain in dB is 17.5 @ 1805MHz, 28V, LDMOS, SOT1819
Overview
The 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
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## Features
* Advanced high performance in-package Doherty
* High thermal conductivity packaging technology for reduced thermal resistance
* Greater negative gate-source voltage range for improved Class C operation
* Designed for digital predistortion error correction systems
* RoHS compliant
## Features RF Performance Table
### 1800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
1805 MHz| 17.5| 48.7| 7.6| –37.5
1840 MHz| 17.6| 48.3| 7.7| –38.9
1880 MHz| 17.4| 48.2| 7.7| –38.5
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