射频金属氧化物半导体场效应RF MOSFET晶体管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 170000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| LET9060STR | ST Microelectronics 意法半导体 | 下载 |
| LET9045F | ST Microelectronics 意法半导体 | 下载 |
| LET9060F | ST Microelectronics 意法半导体 | 下载 |
| LET9045 | ST Microelectronics 意法半导体 | 下载 |
| LET9045S | ST Microelectronics 意法半导体 | 下载 |
| LET9180 | ST Microelectronics 意法半导体 | 下载 |
| LET9060TR | ST Microelectronics 意法半导体 | 下载 |
| LET9060S | ST Microelectronics 意法半导体 | 下载 |
| LET9070CB | ST Microelectronics 意法半导体 | 下载 |
| LET9060C | ST Microelectronics 意法半导体 | 下载 |
| LET9150 | ST Microelectronics 意法半导体 | 下载 |