BSC014N03MSGATMA1

INFINEON  BSC014N03MSGATMA1  晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2 V

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 30A/100A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC014N03MSGATMA1, 100 A, Vds=30 V, 8引脚 TDSON封装

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 100 A, 0.0012 ohm, TDSON, 表面安装

艾睿:
Make an effective common source amplifier using this BSC014N03MSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

富昌:
N-沟道 30 V 100 A 1.4 mΩ 130 nC 表面贴装 功率 Mosfet - TDSON-8

TME:
Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 30A 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 100 A, 30 V, 0.0012 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 30V 30A/100A TDSON / N-Channel 30 V 30A Ta, 100A Tc 2.5W Ta, 139W Tc Surface Mount PG-TDSON-8-1