STGW39NC60VD

STMICROELECTRONICS  STGW39NC60VD  单晶体管, IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 引脚

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

立创商城:
250W 600V 80A

得捷:
IGBT 600V 80A 250W TO247

欧时:
STMicroelectronics STGW39NC60VD N沟道 IGBT, 80 A, Vce=600 V, 1MHz, 3引脚 TO-247封装

贸泽:
IGBT Transistors N-CHANNEL MFT

艾睿:
Minimize the current at your gate with the STGW39NC60VD IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 600V 80A 3-Pin3+Tab TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube

TME:
Transistor: IGBT; 600V; 40A; 250W; TO247-3

Verical:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube

Newark:
IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins

DeviceMart:
IGBT N-CHAN 600V 40A TO-247

Win Source:
IGBT 600V 80A 250W TO247