BSZ088N03LSGATMA1

TSDSON N-CH 30V 12A

表面贴装型 N 通道 30 V 12A（Ta），40A（Tc） 2.1W（Ta），35W（Tc） PG-TSDSON-8

得捷:
MOSFET N-CH 30V 12A/40A 8TSDSON

艾睿:
Compared to traditional transistors, BSZ088N03LSGATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP

Chip1Stop:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 30V; 40A; 35W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

Win Source:
MOSFET N-CH 30V 40A TSDSON-8