硅功率晶体管 Silicon Power Transistors
PNP
MJW21196 NPN
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
•Total Harmonic Distortion Characterized
•High DC Current Gain −hFE= 20 Min @ IC= 8 Adc
•Excellent Gain Linearity
•High SOA: 2.25 A, 80 V, 1 Second
•Pb−Free Packages are Available| 型号 | 品牌 | 下载 |
|---|---|---|
| MJW21195 | ON Semiconductor 安森美 | 下载 |
| MJW21192G | ON Semiconductor 安森美 | 下载 |
| MJW21193G | ON Semiconductor 安森美 | 下载 |
| MJW21191 | ON Semiconductor 安森美 | 下载 |
| MJW21195G | ON Semiconductor 安森美 | 下载 |
| MJW21194G | ON Semiconductor 安森美 | 下载 |
| MJW21196G | ON Semiconductor 安森美 | 下载 |
| MJW21194 | ON Semiconductor 安森美 | 下载 |
| MJW21191G | ON Semiconductor 安森美 | 下载 |
| MJW21193 | ON Semiconductor 安森美 | 下载 |
| MJW21196 | ON Semiconductor 安森美 | 下载 |