STMICROELECTRONICS STN3PF06 晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features
■ Extremely dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Application
■ Switching applications