STGD3HF60HDT4

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STGD3HF60HDT4概述

STGD3HF60HD 系列 600 V 4.5 A 极快速 IGBT 带超快恢复二极管 - TO-252

This IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 38000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

STGD3HF60HDT4中文资料参数规格
技术参数

针脚数 3

耗散功率 38 W

击穿电压集电极-发射极 600 V

反向恢复时间 85 ns

额定功率Max 38 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 38000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

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型号: STGD3HF60HDT4
描述:STGD3HF60HD 系列 600 V 4.5 A 极快速 IGBT 带超快恢复二极管 - TO-252

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