N沟道14A - 600V -DPAK - D2PAK短路额定的PowerMESH TM IGBT N-channel 14A - 600V -DPAK - D2PAK Short circuit rated PowerMESH TM IGBT
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 80000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 600 V
额定电流 14.0 A
极性 N-Channel
耗散功率 80000 mW
栅电荷 34.4 nC
漏源极电压Vds 600 V
连续漏极电流Ids 25.0 A
上升时间 8.50 ns
击穿电压集电极-发射极 600 V
额定功率Max 80 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 80000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free