SQD50N06-09L-GE3概述
VISHAY SQD50N06-09L-GE3 晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
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- 100% Rg tested
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- 100% UIS tested
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- AEC-Q101 qualified
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- Halogen-free
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- -55 to 175°C Operating temperature range
在线购买SQD50N06-09L-GE3
型号： SQD50N06-09L-GE3
制造商：
Vishay Semiconductor
威世
描述：VISHAY SQD50N06-09L-GE3 晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V