SIA975DJ-T1-GE3

VISHAY  SIA975DJ-T1-GE3  双路场效应管, MOSFET, 双P沟道, -4.5 A, -12 V, 0.07 ohm, -1.8 V, -400 mV

The is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for load switch, PA switch and battery switch for gaming console applications.

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Halogen-free

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TrenchFET® power MOSFET

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New thermally enhanced PowerPAK® package

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Small footprint

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Low ON-resistance

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100% Rg tested