








N 通道 STripFET™ F7 系列,STMicroelectronicsSTripFET™ F7 系列低电压 MOSFET 具有较低的设备通态电阻,降低了内部电容和栅极电荷,提供更快更高效的切换。### MOSFET 晶体管,STMicroelectronics
N 通道 STripFET™ F7 系列,STMicroelectronics
STMicroelectronics STripFET™ F7 系列低电压 MOSFET 具有较低设备通态电阻,内部电容和栅极电荷降低,以便更快、更高效地切换。
### MOSFET ,STMicroelectronics
得捷:
MOSFET N-CH 80V 120A H2PAK-2
欧时:
### N 通道 STripFET™ F7 系列,STMicroelectronicsSTMicroelectronics STripFET™ F7 系列低电压 MOSFET 具有较低设备通态电阻,内部电容和栅极电荷降低,以便更快、更高效地切换。### MOSFET 晶体管,STMicroelectronics
艾睿:
Compared to traditional transistors, STH170N8F7-2 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 200000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET N-CH 80V 120A 3-Pin H2PAK T/R
Verical:
Trans MOSFET N-CH 80V 120A 3-Pin2+Tab H2PAK T/R
极性 N-CH
耗散功率 250 W
输入电容 8710 pF
漏源极电压Vds 80 V
连续漏极电流Ids 120A
上升时间 53 ns
输入电容Ciss 8710pF @40VVds
下降时间 37 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.4 mm
宽度 10.57 mm
高度 4.8 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STH170N8F7-2 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STH210N75F6-2 意法半导体 | 功能相似 | STH170N8F7-2和STH210N75F6-2的区别 |