N沟道55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO- 220 / FP的STripFET TM功率MOSFET N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET
N-Channel 55V 80A Tc 110W Tc Through Hole I-PAK
得捷:
MOSFET N-CH 55V 80A IPAK
贸泽:
MOSFET N-Ch, 55V-6.5Mohms 80A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the STU60N55F3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 110000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes stripfet iii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 55V 80A 3-Pin3+Tab IPAK Tube
Win Source:
MOSFET N-CH 55V 80A IPAK
通道数 1
漏源极电阻 0.0065 Ω
极性 N-Channel
耗散功率 110 W
阈值电压 4 V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 32.0 A
上升时间 50 ns
输入电容Ciss 2200pF @25VVds
额定功率Max 110 W
下降时间 11.5 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 110W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.6 mm
宽度 2.4 mm
高度 6.2 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STU60N55F3 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STP60N55F3 意法半导体 | 功能相似 | STU60N55F3和STP60N55F3的区别 |
STB80NF55-08-1 意法半导体 | 功能相似 | STU60N55F3和STB80NF55-08-1的区别 |