DPAK N-CH 60V 27A
表面贴装型 N 通道 60 V 27A（Tc） 68W（Tc） PG-TO252-3
得捷:
MOSFET N-CH 60V 27A TO252-3
贸泽:
MOSFET MV POWER MOS
艾睿:
Increase the current or voltage in your circuit with this IPD400N06NGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 68000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Chip1Stop:
Trans MOSFET N-CH 60V 27A 3-Pin2+Tab TO-252 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 19A; 68W; PG-TO252-3
Verical:
Trans MOSFET N-CH 60V 27A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 60V 27A TO-252
额定电压DC 60.0 V
额定电流 27.0 A
极性 N-CH
耗散功率 68 W
输入电容 650 pF
栅电荷 17.0 nC
漏源极电压Vds 60 V
连续漏极电流Ids 27.0 A
上升时间 24 ns
输入电容Ciss 650pF @30VVds
额定功率Max 68 W
下降时间 23 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 68W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Or-ing switches, Isolated DC-DC converters, Synchronous rectification
RoHS标准 RoHS Compliant
含铅标准 Lead Free