TO-220 N-CH 1200V 2.4A
N-Channel 1200V 2.4A Tc 125W Tc Through Hole TO-220AB
得捷:
MOSFET N-CH 1200V 2.4A TO220AB
艾睿:
Compared to traditional transistors, IXTP2R4N120P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH 1.2KV 2.4A 3-Pin3+Tab TO-220
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXTP2R4N120P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTA2R4N120P IXYS Semiconductor | 功能相似 | IXTP2R4N120P和IXTA2R4N120P的区别 |
IXTH2R4N120P IXYS Semiconductor | 功能相似 | IXTP2R4N120P和IXTH2R4N120P的区别 |